IXTQ200N10T
RoHS

IXTQ200N10T

IXTQ200N10T

IXYS

MOSFET N-CH 100V 200A TO3P

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IXTQ200N10T

Availability: 16215 pieces
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Products Specifications
PackageTube
SeriesTrench
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C200A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)5.5mOhm @ 50A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs152 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)9400 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature550W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-3P
GateCharge(Qg)(Max)@VgsTO-3P-3, SC-65-3
Grade
Qualification