IXTH50P10
| Part No | IXTH50P10 |
|---|---|
| Manufacturer | IXYS |
| Description | MOSFET P-CH 100V 50A TO247 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
11120
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.0589 | |
| 10 | 11.8177 | |
| 100 | 11.456 | |
| 1000 | 11.0942 | |
| 10000 | 10.6118 |
| Products Specifications | |
|---|---|
| Package | Tube |
| Series | - |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 50A (Tc) |
| DriveVoltage(MaxRdsOn | 55mOhm @ 25A, 10V |
| MinRdsOn) | 5V @ 250µA |
| RdsOn(Max)@Id | 140 nC @ 10 V |
| Vgs | ±20V |
| Vgs(th)(Max)@Id | 4350 pF @ 25 V |
| Vgs(Max) | - |
| InputCapacitance(Ciss)(Max)@Vds | 300W (Tc) |
| FETFeature | -55°C ~ 150°C (TJ) |
| PowerDissipation(Max) | Through Hole |
| OperatingTemperature | TO-247 (IXTH) |
| MountingType | TO-247-3 |
| SupplierDevicePackage | 10V |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| Qualification | |
