IXTA2R4N120P
RoHS

IXTA2R4N120P

IXTA2R4N120P

IXYS

MOSFET N-CH 1200V 2.4A TO263

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IXTA2R4N120P

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Products Specifications
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C2.4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)7.5Ohm @ 500mA, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs37 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1207 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AA
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification