IXFN82N60P
RoHS

IXFN82N60P

IXFN82N60P

IXYS

MOSFET N-CH 600V 72A SOT-227B

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IXFN82N60P

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Products Specifications
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C72A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)75mOhm @ 41A, 10V
RdsOn(Max)@Id5V @ 8mA
Vgs240 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)23000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1040W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227B
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification