SIR836DP-T1-GE3
| Part No | SIR836DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 40V 21A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
24771
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.664 | |
| 10 | 0.6507 | |
| 100 | 0.6308 | |
| 1000 | 0.6109 | |
| 10000 | 0.5843 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 506.605978 mg |
| Fall Time | 11 ns |
| Lead Free | Lead Free |
| Packaging | Digi-Reel® |
| Rise Time | 19 ns |
| REACH SVHC | Unknown |
| Rds On Max | 19 mΩ |
| Resistance | 22.5 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 1.2 V |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 600 pF |
| Power Dissipation | 3.9 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 14 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17 ns |
| Max Power Dissipation | 15.6 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 19 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 21 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drain to Source Breakdown Voltage | 40 V |
