SIA913ADJ-T1-GE3
| Part No | SIA913ADJ-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET 2P-CH 12V 4.5A SC70-6 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
18241
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.678 | |
| 10 | 0.6644 | |
| 100 | 0.6441 | |
| 1000 | 0.6238 | |
| 10000 | 0.5966 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05 mm |
| Height | 750 µm |
| Length | 2.05 mm |
| Weight | 28.009329 mg |
| Fall Time | 25 ns |
| Rise Time | 25 ns |
| Rds On Max | 61 mΩ |
| Schedule B | 8541290080 |
| Case/Package | TSSOP |
| Contact Plating | Tin |
| Input Capacitance | 590 pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 20 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30 ns |
| Element Configuration | Dual |
| Max Power Dissipation | 6.5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 50 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Continuous Drain Current (ID) | 4.3 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drain to Source Breakdown Voltage | -12 V |
