SI8425DB-T1-E1
RoHS

SI8425DB-T1-E1

SI8425DB-T1-E1

Vishay

MOSFET P-CH 20V MICROFOOT

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SI8425DB-T1-E1

Availability: 18366 pieces
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Products Specifications
RoHSCompliant
MountSurface Mount
Fall Time200 ns
Lead FreeLead Free
Rise Time50 ns
Rds On Max23 mΩ
Resistance23 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins4
Contact PlatingTin
Input Capacitance2.8 nF
Power Dissipation2.7 W
Number of Channels1
Number of Elements1
Turn-On Delay Time50 ns
Radiation HardeningNo
Turn-Off Delay Time600 ns
Element ConfigurationSingle
Max Power Dissipation1.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance23 mΩ
Gate to Source Voltage (Vgs)10 V
Continuous Drain Current (ID)9.3 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V