SI7892BDP-T1-E3
| Part No | SI7892BDP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 15A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
23268
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.013 | |
| 10 | 1.9727 | |
| 100 | 1.9123 | |
| 1000 | 1.852 | |
| 10000 | 1.7714 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89 mm |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Weight | 506.605978 mg |
| Fall Time | 35 ns |
| Lead Free | Lead Free |
| Rise Time | 20 ns |
| REACH SVHC | Unknown |
| Rds On Max | 4.2 mΩ |
| Resistance | 4.2 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 1 V |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 3.775 nF |
| Power Dissipation | 1.8 W |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 62 ns |
| Element Configuration | Single |
| Max Power Dissipation | 5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 4.2 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 15 A |
| Drain to Source Voltage (Vdss) | 30 V |
