SI7758DP-T1-GE3
RoHS

SI7758DP-T1-GE3

SI7758DP-T1-GE3

Vishay

MOSFET N-CH 30V 60A PPAK SO-8

Download Datasheet

SI7758DP-T1-GE3

Availability: 16404 pieces
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time30 ns
Lead FreeLead Free
Rise Time25 ns
Rds On Max2.9 mΩ
Resistance2.9 mΩ
Case/PackageSOIC
Number of Pins8
Input Capacitance7.15 nF
Power Dissipation6.25 W
Number of Channels1
Number of Elements1
Turn-On Delay Time53 ns
Radiation HardeningNo
Turn-Off Delay Time56 ns
Max Power Dissipation104 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance2.9 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)34.6 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V