SI7108DN-T1-GE3
RoHS

SI7108DN-T1-GE3

SI7108DN-T1-GE3

Vishay

MOSFET N-CH 20V 14A 1212-8

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SI7108DN-T1-GE3

Availability: 22868 pieces
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Products Specifications
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Rise Time10 ns
REACH SVHCUnknown
Rds On Max4.9 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Power Dissipation1.5 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time60 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.9 mΩ
Gate to Source Voltage (Vgs)16 V
Continuous Drain Current (ID)14 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V