SI4896DY-T1-E3
RoHS

SI4896DY-T1-E3

SI4896DY-T1-E3

Vishay

MOSFET N-CH 80V 6.7A 8-SOIC

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SI4896DY-T1-E3

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Products Specifications
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight506.605978 mg
Fall Time11 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time11 ns
REACH SVHCNo SVHC
Rds On Max16.5 mΩ
Resistance16.5 mΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Nominal Vgs2 V
Case/PackageSOIC
Number of Pins8
Power Dissipation1.56 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time17 ns
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Max Power Dissipation1.56 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance16.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)9.5 A
Drain to Source Voltage (Vdss)80 V
Drain to Source Breakdown Voltage80 V