SI4447ADY-T1-GE3
RoHS

SI4447ADY-T1-GE3

SI4447ADY-T1-GE3

Vishay

MOSFET P-CH 40V 7.2A 8SOIC

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SI4447ADY-T1-GE3

Availability: 18733 pieces
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Products Specifications
RoHSCompliant
MountSurface Mount
Height1.75 mm
Weight506.605978 mg
Fall Time9 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max45 mΩ
Schedule B8541290080
Case/PackageSOIC
Number of Pins8
Input Capacitance970 pF
Power Dissipation2.5 W
Threshold Voltage-1.2 V
Number of Channels1
Number of Elements2
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time30 ns
Element ConfigurationSingle
Max Power Dissipation4.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance36 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-5.5 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-40 V
Drain to Source Breakdown Voltage-40 V