FQU2N100TU
RoHS

FQU2N100TU

FQU2N100TU

onsemi

MOSFET N-CH 1000V 1.6A IPAK

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FQU2N100TU

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Products Specifications
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageI-PAK
SeriesQFET®
Rds On (Max) @ Id, Vgs9 Ohm @ 800mA, 10V
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
PackagingTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time28 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V
Gate Charge (Qg) (Max) @ Vgs15.5nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)1000V
Detailed DescriptionN-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)